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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorYa, Aleshkin, V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorDvoretski, S. A.en
dc.contributor.authorMikhailov, N. N.en
dc.contributor.authorGermanenko, A. V.en
dc.date.accessioned2021-08-31T14:58:04Z-
dc.date.available2021-08-31T14:58:04Z-
dc.date.issued2020-
dc.identifier.citationAnisotropy of the in-plane g-factor of electrons in HgTe quantum wells / G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, et al. — DOI 10.1103/PhysRevB.101.085305 // Physical Review B. — 2020. — Vol. 101. — Iss. 8. — 085305.en
dc.identifier.issn24699950-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85082800278&doi=10.1103%2fPhysRevB.101.085305&partnerID=40&md5=e14e54fcb7a3c2931d676ef6fa289e52
dc.identifier.otherhttp://arxiv.org/pdf/1909.07611m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101542-
dc.description.abstractThe results of experimental studies of the Shubnikov-de Haas (SdH) effect in the (013)-HgTe/Hg1-xCdxTe quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band kP model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry. © 2020 American Physical Society.en
dc.description.sponsorshipWe are grateful to E. L. Ivchneko for useful discussions. The work has been supported in part by the Russian Foundation for Basic Research (Grant No. 18-02-00050), by Act 211 Government of the Russian Federation, Agreement No. 02.A03.21.0006, by the Ministry of Science and Higher Education of the Russian Federation under Project No. FEUZ-2020-0054, and by the FASO of Russia (theme “Electron” No. 01201463326).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B2
dc.sourcePhysical Review Ben
dc.subjectANISOTROPYen
dc.subjectCRYSTALLOGRAPHYen
dc.subjectMERCURY COMPOUNDSen
dc.subjectSHUBNIKOV-DE HAAS EFFECTen
dc.subjectSPECTROSCOPYen
dc.subjectCOMPREHENSIVE ANALYSISen
dc.subjectCRYSTALLOGRAPHIC AXESen
dc.subjectIN-PLANE MAGNETIC FIELDSen
dc.subjectINVERSION ASYMMETRYen
dc.subjectINVERTED SPECTRAen
dc.subjectSHUBNIKOV-DE HAASen
dc.subjectSTRONG ANISOTROPYen
dc.subjectTILTED MAGNETIC FIELDSen
dc.subjectSEMICONDUCTOR QUANTUM WELLSen
dc.titleAnisotropy of the in-plane g-factor of electrons in HgTe quantum wellsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.101.085305-
dc.identifier.scopus85082800278-
local.contributor.employeeMinkov, G.M., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation, M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.employeeYa Aleshkin, V., Institute for Physics of Microstructures RAS, Nizhny Novgorod, 603087, Russian Federation, Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russian Federation
local.contributor.employeeRut, O.E., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeSherstobitov, A.A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation, M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.employeeDvoretski, S.A., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.contributor.employeeMikhailov, N.N., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation, Department of Physics, Novosibirsk State University, Novosibirsk, 630090, Russian Federation
local.contributor.employeeGermanenko, A.V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.issue8-
local.volume101-
dc.identifier.wos000515659700006-
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentM. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.departmentInstitute for Physics of Microstructures RAS, Nizhny Novgorod, 603087, Russian Federation
local.contributor.departmentLobachevsky University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russian Federation
local.contributor.departmentInstitute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.contributor.departmentDepartment of Physics, Novosibirsk State University, Novosibirsk, 630090, Russian Federation
local.identifier.pure12448996-
local.description.order085305-
local.identifier.eid2-s2.0-85082800278-
local.fund.rffi18-02-00050-
local.identifier.wosWOS:000515659700006-
local.fund.feuzFEUZ-2020-0054-
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