Влияние толщины оксидного слоя на вольтамперные характеристики структуры Ti/TiO2/Au

Abstract

Oxide layers with 80, 120, 160 and 200 nm thickness were synthesized on surfaces of titanium foil via electrochemical oxidation for 5, 10, 15 and 20 min, respectively. The current–voltage characteristics of the fabricated Ti/TiO2/Au sandwich-structure were investigated in full cycles of resistive switching. For micromemristors with  160 nm oxide thick28 ness more 20 cycles of switching was found and ratio in the low-and high- resistance states RHRS/RLRS ≈ 700 – 760 was determined.