Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/83167
Title: Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics
Authors: Klunnikova, Y. V.
Malyukov, S. P.
Issue Date: 2018
Publisher: Knowledge E
Citation: Klunnikova Y. V. Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics / Y. V. Klunnikova, S. P. Malyukov // Russian Forum of Young Scientists (RFYS) (Ekaterinburg, Russia, 27–28 April , 2017). – Dubai : Knowledge E, 2018. – KnE Engineering, 3 (5). – pp. 179-184. – DOI 10.18502/keg.v3i4.2240
Abstract: The results of numerical simulation allow to investigate the thermal conditions received by active heaters influence on the thermoelastic stresses and gas inclusions in sapphire. We carried out the experiments for defects detection in sapphire crystals. We suggest the recommendations about sapphire crystals growth and processing improvement for profitability increase in sapphire substrates production for microelectronics.
URI: http://hdl.handle.net/10995/83167
Access: Creative Commons Attribution License
License text: https://creativecommons.org/licenses/by/4.0/
Conference name: Russian Forum of Young Scientists (RFYS)
Conference date: 27.04.2017-28.04.2017
ISSN: 2518-6841
DOI: 10.18502/keg.v3i4.2240
metadata.dc.description.sponsorship: This research is supported by the Federal Target Program of the Ministry of Education and Science of Russian Federation No. 14.587.21.0025, the project ID is RFMEFI58716X0025.
Origin: Russian Forum of Young Scientists (RFYS). — Ekaterinburg, 2018
Appears in Collections:Междисциплинарные конференции, семинары, сборники

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