ISSN: 2310-757X
Please use this identifier to cite or link to this item:
https://elar.urfu.ru/handle/10995/79237| Title: | Resistive switching and ferroelectricity in HfO2 thin films |
| Authors: | Lyapunov, N. Yau, H. M. Dai, J. Y. |
| Issue Date: | 2019 |
| Publisher: | Ural Federal University |
| Citation: | Lyapunov N. Resistive switching and ferroelectricity in HfO2 thin films / N. Lyapunov, H. M. Yau, J. Y. Dai // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 111. |
| URI: | http://elar.urfu.ru/handle/10995/79237 |
| Conference name: | 3rd International Conference "Scanning Probe Microscopy" ; 4th Russia-China Workshop on Dielectric and Ferroelectric Materials ; International Youth Conference "Functional Imaging of nanomaterials" |
| Conference date: | 25.08.2019-28.08.2019 |
| ISBN: | 978-5-9500624-2-1 |
| Origin: | Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019 |
| Appears in Collections: | Scanning Probe Microscopy |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 978-5-9500624-2-1_2019_091.pdf | 158,2 kB | Adobe PDF | View/Open |
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