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|Title:||Formation of vacuum electronics elements by a combination of methods of focused ion beams and plasma layer etching on SiC|
|Authors:||Rezvan, A. A.|
Klimin, V. S.
Kots, I. N.
|Publisher:||Ural Federal University|
|Citation:||Rezvan A. A. Formation of vacuum electronics elements by a combination of methods of focused ion beams and plasma layer etching on SiC / A. A. Rezvan, V. S. Klimin, I. N. Kots // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 240.|
|Conference name:||3rd International Conference "Scanning Probe Microscopy" ; 4th Russia-China Workshop on Dielectric and Ferroelectric Materials ; International Youth Conference "Functional Imaging of nanomaterials"|
|metadata.dc.description.sponsorship:||This work was supported by Grant of the President of the Russian Federation No. МК-3512.2019.8 and Southern Federal University (grant VnGr-07/2017-02). The results were obtained using the equipment of the Research and Education Center "Nanotechnologies" of Southern Federal University.|
|Origin:||Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019|
|Appears in Collections:||Scanning Probe Microscopy|
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