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|Title:||Controlling Surface Potential of Graphene Using dc Electric Field|
Kholkin, A. L.
|Citation:||Controlling Surface Potential of Graphene Using dc Electric Field / R. Vidyasagar, B. Camargo, E. Pelegova, K. Romanyuk, A. L. Kholkin // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 183-189. — DOI: 10.18502/kms.v1i1.583|
|Abstract:||In this work, we study surface potential of graphite deposited on SiO2/Si substrate using Kelvin Probe Force Microscopy (KPFM) and Electric Force Microscopy (EFM). The amplitude modulated KPFM (AM-KPFM) shows that the graphene layer work function is 4.69±0.02 eV, whereas frequency modulated KPFM (FM-KPFM) revealed 4.50±0.02 eV. The work function indifference of 0.19±0.02 eV was attributed to the superior resolution of FM-KPFM and higher detection sensitivity of AM-KPFM. Subsequent EFM mapping suggests that the phase monotonically increases with increasing applied dc bias voltage in the range from -5 V to 5 V. This phase shift is ascribed to the induced charge polarization at tip-graphene surface due to interatomic interactions induced by dc field effects.|
DC FIELD EFFECTS
|Conference name:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology|
|metadata.dc.description.sponsorship:||R.V. thanks Foundation of Science and Technology of Portugal for the postdoctoral grant SFRH/BPD/104887/2014. E.P., K.R and A.L.K. are grateful to the Russian Foundation for Basic Research (grant No 16-29-14050-ofr-m) and Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006) for the financial support. Part of this work was developed in the scope of Project CICECO-Aveiro Institute of Materials (ref. FCT UID/CTM/50011/2013), financed by national funds through the FCT/MEC and, when applicable, cofinanced by FEDER under the PT2020 Partnership Agreement.|
|Origin:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016|
|Appears in Collections:||АТУРК|
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