Optically Active Defects Induced by 10 MeV Electron Beam in Transparent MgAl2O4 Ceramics

Abstract

In the synthesized MgAl 2 O 4 ceramics, Raman scattering modes were detected due to the presence of random distribution of cations over structural positions (structural reversal effects). Irradiation by 10 MeV electron beam caused intensity redistribution of the fundamental bands in Raman spectrum. New optical absorption bands were registered. Observed features were attributed to the effect of radiation-induced `ionic mixing' in cation sublattice. This effect is the formation of additional [Al] Mg and [Mg] Al anti-site defects. The obtained data on the defects in transparent ceramics are of interest for the creation of radiation-resistant electromagnetic radiation converters for alternative energy.