Optical Properties of Cu2S/SnS2 Precursor Layers for the Preparation of Kesterite Cu2SnS3 Photovoltaic Absorber

Abstract

The Cu 2 S and SnS 2 layers have been prepared by the chemical bath deposition method. The results of SEM and EDX analyses confirm a high stoichiometry of the synthesized semiconductor thin films. The optical properties of the Cu 2 S and SnS 2 layers have been studied, and the optical band gap values have been determined.