ISSN: 2310-757X
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https://elar.urfu.ru/handle/10995/63238| Title: | Optical Properties of Cu2S/SnS2 Precursor Layers for the Preparation of Kesterite Cu2SnS3 Photovoltaic Absorber |
| Authors: | Maskaeva, L. N. Lipina, O. A. Markov, V. F. Fedorova, E. A. Klochko, E. A. |
| Issue Date: | 2018 |
| Publisher: | Knowledge E |
| Citation: | Optical Properties of Cu2S/SnS2 Precursor Layers for the Preparation of Kesterite Cu2SnS3 Photovoltaic Absorber / L. N. Maskaeva, O. A. Lipina, V. F. Markov, E. A. Fedorova, E. A. Klochko // ASRTU Conference on Alternative Energy : Sino-Russian ASRTU Conference Alternative Energy: Materials, Technologies, and Devices (Ural Federal University, Ekaterinburg, Russia, 13–16 July 2018). – Dubai : Knowledge E, 2018. – pp. 39-44. — DOI: 10.18502/kms.v4i2.3035 |
| Abstract: | The Cu 2 S and SnS 2 layers have been prepared by the chemical bath deposition method. The results of SEM and EDX analyses confirm a high stoichiometry of the synthesized semiconductor thin films. The optical properties of the Cu 2 S and SnS 2 layers have been studied, and the optical band gap values have been determined. |
| Keywords: | THIN FILMS SULFIDES BAND GAP HYDROCHEMICAL DEPOSITION TRANSMITTANCE PHOTOVOLTAIC ABSORBER |
| URI: | http://elar.urfu.ru/handle/10995/63238 |
| Conference name: | Sino-Russian ASRTU Conference Alternative Energy: Materials, Technologies, and Devices |
| Conference date: | 13.07.2018-16.07.2018 |
| ISSN: | 2519-1438 |
| DOI: | 10.18502/kms.v4i2.3035 |
| Sponsorship: | The work was financially supported by program 211 of the Government of the Russian Federation (No. 02.A03.21.0006) and by the FASO program No. AAAA-А16-116122810218-7. |
| Origin: | Sino-Russian ASRTU Conference Alternative Energy: Materials, Technologies, and Devices. — Ekaterinburg, 2018 |
| Appears in Collections: | АТУРК |
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| kms.v4i2.3035.pdf | 840,14 kB | Adobe PDF | View/Open |
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