Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111460
Title: Finite Size and Intrinsic Field Effect on the Polar-Active Properties of Ferroelectric-Semiconductor Heterostructures
Authors: Morozovska, A. N.
Eliseev, E. A.
Svechnikov, S. V.
Krutov, A. D.
Shur, V. Y.
Borisevich, A. Y.
Maksymovych, P.
Kalinin, S. V.
Issue Date: 2010
Publisher: American Physical Society (APS)
Citation: Finite Size and Intrinsic Field Effect on the Polar-Active Properties of Ferroelectric-Semiconductor Heterostructures / A. N. Morozovska, E. A. Eliseev, S. V. Svechnikov et al. // Physical Review B - Condensed Matter and Materials Physics. — 2010. — Vol. 81. — Iss. 20. — 205308.
Abstract: Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization, and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles, and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the electric field of the nanosized tip of the scanning probe microscope) the thickness and charge of the interface layer drastically changes, in particular, the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport. © 2010 The American Physical Society.
URI: http://hdl.handle.net/10995/111460
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 77955749891
ISSN: 1098-0121
metadata.dc.description.sponsorship: Authors are grateful to E. Tsymbal and E. Tsymbal for valuable critical remarks. Research is sponsored by Ministry of Science and Education of Ukraine and National Science Foundation(Materials World Network, Grant No. DMR-0908718). S.V.K. and A.B. acknowledge the DOE SISGR program. P.M. is supported by the Division of Scientific User Facilities, US DOE.
NSF project card: DMR-0908718
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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