Синтез наноструктурированных пленок β-SiC в атмосфере метана

Abstract

After activation of synthesis processes by the radiation of powerful pulse xenon lamps (range of lengths of waves of 0,2-1,2 microns) on a surface of plates of silicon by method of chemical conversion has received thin films of β-SiC. Substructure of β-SiC films have been investigated by methods of the diffraction of high-velocity electrons (DHVE) and the translucent submicroscopy (TS).