Особенности начальных стадий роста гетероэпитаксиальных пленок GaP/Si при импульсном лазерном напылении

Abstract

Heteroepitaxial thin GaP/Si films were obtained by pulsed laser sputtering, using the stage of the Osvoldovsky ripening of embryos at the initial stages of film growth. It was found that single-crystal GaP films were obtained during the passage of the stage of the Osvoldovsky maturation of nucleation.