Size effect in the electronic transport of thin films of Bi 2 Se 3

Marchenkov, V. V.; Chistyakov, V. V.; Huang, J. C. A.; Perevozchikova, Y. A.; Domozhirova, A. N.; Eisterer, M.

doi:10.1051/epjconf/201818501002

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Полная запись метаданных

Поле DC	Значение	Язык
dc.contributor.author	Marchenkov, V. V.	en
dc.contributor.author	Chistyakov, V. V.	en
dc.contributor.author	Huang, J. C. A.	en
dc.contributor.author	Perevozchikova, Y. A.	en
dc.contributor.author	Domozhirova, A. N.	en
dc.contributor.author	Eisterer, M.	en
dc.date.accessioned	2019-07-22T06:45:45Z	-
dc.date.available	2019-07-22T06:45:45Z	-
dc.date.issued	2018	-
dc.identifier.citation	Size effect in the electronic transport of thin films of Bi 2 Se 3 / V. V. Marchenkov, V. V. Chistyakov, J. C. A. Huang et al. // EPJ Web of Conferences. — 2018. — Vol. 185. — 1002.	en
dc.identifier.issn	2101-6275	-
dc.identifier.other	https://www.epj-conferences.org/articles/epjconf/pdf/2018/20/epjconf_mism2017_01002.pdf	pdf
dc.identifier.other	1	good_DOI
dc.identifier.other	f0120331-4757-4177-8530-40e44b5d036d	pure_uuid
dc.identifier.other	http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85052894107	m
dc.identifier.uri	http://elar.urfu.ru/handle/10995/75228	-
dc.description.abstract	Thin films of a topological insulator (TI) Bi 2 Se 3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section. © 2018 The Authors, published by EDP Sciences.	en
dc.description.sponsorship	This work was partly supported by the state assignment of FASO of Russia (theme “Spin” No. ȺȺȺȺ Ⱥ 4 ), by the RFBR (project No. 17-52-52008), by the Government of the Russian Federation (state contract No. 02.A03.21.0006), and by grant of Russian Ministry of Education and Science No 14.Z50.31.0025.	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	EDP Sciences	en
dc.rights	info:eu-repo/semantics/openAccess	en
dc.source	EPJ Web of Conferences	en
dc.title	Size effect in the electronic transport of thin films of Bi 2 Se 3	en
dc.type	Conference Paper	en
dc.type	info:eu-repo/semantics/conferenceObject	en
dc.type	info:eu-repo/semantics/publishedVersion	en
dc.conference.name	2017 Moscow International Symposium on Magnetism, MISM 2017	en
dc.conference.date	1 July 2017 through 5 July 2017	-
dc.identifier.rsi	35720358	-
dc.identifier.doi	10.1051/epjconf/201818501002	-
dc.identifier.scopus	85052894107	-
local.affiliation	M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620137, Russian Federation	en
local.affiliation	Ural Federal University, Ekaterinburg, 620002, Russian Federation	en
local.affiliation	National Cheng Kung University, Tainan, Taiwan	en
local.affiliation	TU Wien Atominstitut, Vienna, 1020, Austria	en
local.contributor.employee	Марченков Вячеслав Викторович	ru
local.contributor.employee	Перевозчикова Юлия Александровна	ru
local.volume	185	-
dc.identifier.wos	000468037700002	-
local.identifier.pure	7904105	-
local.description.order	1002	-
local.identifier.eid	2-s2.0-85052894107	-
local.identifier.wos	WOS:000468037700002	-
Располагается в коллекциях:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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