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Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Vidyasagar, R. | en |
dc.contributor.author | Camargo, B. | en |
dc.contributor.author | Pelegova, E. | en |
dc.contributor.author | Romanyuk, K. | en |
dc.contributor.author | Kholkin, A. L. | en |
dc.date.accessioned | 2018-10-21T17:37:17Z | - |
dc.date.available | 2018-10-21T17:37:17Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Controlling Surface Potential of Graphene Using dc Electric Field / R. Vidyasagar, B. Camargo, E. Pelegova, K. Romanyuk, A. L. Kholkin // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 183-189. — DOI: 10.18502/kms.v1i1.583 | en |
dc.identifier.issn | 2519-1438 | - |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/63298 | - |
dc.description.abstract | In this work, we study surface potential of graphite deposited on SiO2/Si substrate using Kelvin Probe Force Microscopy (KPFM) and Electric Force Microscopy (EFM). The amplitude modulated KPFM (AM-KPFM) shows that the graphene layer work function is 4.69±0.02 eV, whereas frequency modulated KPFM (FM-KPFM) revealed 4.50±0.02 eV. The work function indifference of 0.19±0.02 eV was attributed to the superior resolution of FM-KPFM and higher detection sensitivity of AM-KPFM. Subsequent EFM mapping suggests that the phase monotonically increases with increasing applied dc bias voltage in the range from -5 V to 5 V. This phase shift is ascribed to the induced charge polarization at tip-graphene surface due to interatomic interactions induced by dc field effects. | en |
dc.description.sponsorship | R.V. thanks Foundation of Science and Technology of Portugal for the postdoctoral grant SFRH/BPD/104887/2014. E.P., K.R and A.L.K. are grateful to the Russian Foundation for Basic Research (grant No 16-29-14050-ofr-m) and Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006) for the financial support. Part of this work was developed in the scope of Project CICECO-Aveiro Institute of Materials (ref. FCT UID/CTM/50011/2013), financed by national funds through the FCT/MEC and, when applicable, cofinanced by FEDER under the PT2020 Partnership Agreement. | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | Knowledge E | en |
dc.relation.ispartof | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016 | en |
dc.subject | SURFACE POTENTIAL | en |
dc.subject | GRAPHENE LAYERS | en |
dc.subject | DC FIELD EFFECTS | en |
dc.title | Controlling Surface Potential of Graphene Using dc Electric Field | en |
dc.type | Conference Paper | en |
dc.type | info:eu-repo/semantics/conferenceObject | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.conference.name | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology | en |
dc.conference.date | 23.06.2016-26.06.2016 | - |
dc.identifier.doi | 10.18502/kms.v1i1.583 | - |
local.description.firstpage | 183 | - |
local.description.lastpage | 189 | - |
dc.identifier.wos | WOS:000395106000031 | - |
Располагается в коллекциях: | АТУРК |
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kms.v1i1.583.pdf | 721,35 kB | Adobe PDF | Просмотреть/Открыть |
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