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dc.contributor.authorVidyasagar, R.en
dc.contributor.authorCamargo, B.en
dc.contributor.authorPelegova, E.en
dc.contributor.authorRomanyuk, K.en
dc.contributor.authorKholkin, A. L.en
dc.date.accessioned2018-10-21T17:37:17Z-
dc.date.available2018-10-21T17:37:17Z-
dc.date.issued2016-
dc.identifier.citationControlling Surface Potential of Graphene Using dc Electric Field / R. Vidyasagar, B. Camargo, E. Pelegova, K. Romanyuk, A. L. Kholkin // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 183-189. — DOI: 10.18502/kms.v1i1.583en
dc.identifier.issn2519-1438-
dc.identifier.urihttp://elar.urfu.ru/handle/10995/63298-
dc.description.abstractIn this work, we study surface potential of graphite deposited on SiO2/Si substrate using Kelvin Probe Force Microscopy (KPFM) and Electric Force Microscopy (EFM). The amplitude modulated KPFM (AM-KPFM) shows that the graphene layer work function is 4.69±0.02 eV, whereas frequency modulated KPFM (FM-KPFM) revealed 4.50±0.02 eV. The work function indifference of 0.19±0.02 eV was attributed to the superior resolution of FM-KPFM and higher detection sensitivity of AM-KPFM. Subsequent EFM mapping suggests that the phase monotonically increases with increasing applied dc bias voltage in the range from -5 V to 5 V. This phase shift is ascribed to the induced charge polarization at tip-graphene surface due to interatomic interactions induced by dc field effects.en
dc.description.sponsorshipR.V. thanks Foundation of Science and Technology of Portugal for the postdoctoral grant SFRH/BPD/104887/2014. E.P., K.R and A.L.K. are grateful to the Russian Foundation for Basic Research (grant No 16-29-14050-ofr-m) and Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006) for the financial support. Part of this work was developed in the scope of Project CICECO-Aveiro Institute of Materials (ref. FCT UID/CTM/50011/2013), financed by national funds through the FCT/MEC and, when applicable, cofinanced by FEDER under the PT2020 Partnership Agreement.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherKnowledge Een
dc.relation.ispartofIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016en
dc.subjectSURFACE POTENTIALen
dc.subjectGRAPHENE LAYERSen
dc.subjectDC FIELD EFFECTSen
dc.titleControlling Surface Potential of Graphene Using dc Electric Fielden
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.conference.nameIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technologyen
dc.conference.date23.06.2016-26.06.2016-
dc.identifier.doi10.18502/kms.v1i1.583-
local.description.firstpage183-
local.description.lastpage189-
dc.identifier.wosWOS:000395106000031-
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