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|Title:||Electromechanical Measurements of Gd-Doped Ceria Thin Films by Laser Interferometry|
|Authors:||Ushakov, A. D.|
Shur, V. Ya.
Kholkin, A. L.
|Citation:||Electromechanical Measurements of Gd-Doped Ceria Thin Films by Laser Interferometry / A. D. Ushakov, N. Yavo, E. Mishuk, I. Lubomirsky, V. Ya. Shur, A. L. Kholkin // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 177-182. — DOI: 10.18502/kms.v1i1.582|
|Abstract:||Highly sensitive laser interferometer was built to measure electromechanical coupling in Gd-doped ceria Ce0.9Gd0.1O2−x thin films in the frequency range up to 20 kHz. Spurious resonances due to substrate bending were avoided by the special mounting of the film in the center of substrate. Compact design allowed to reach high vertical resolution of about 0.2 pm. Electrostriction coefficient measured in 1 μm thick Ce0.9Gd0.1O2−x film was 4.3×10−21m2/V2 and slightly decreased with frequency till the extensional resonance of the substrate at about 20 kHz occurred. As expected, the displacement varied as a square of applied voltage without any sign of saturation. A comparison with ceramics showed much higher electrostriction coefficient in the latter in the same frequency range.|
|Keywords:||GADOLINIUM DOPED CERIA|
|Conference name:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology|
|metadata.dc.description.sponsorship:||The equipment of the Ural Center for Shared Use “Modern Nanotechnology” of the Ural Federal University was used. The research was made possible by Russian Foundation for Basic Research (grant 15-52-06006-MNTI_a) and by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).|
|Origin:||IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016|
|Appears in Collections:||АТУРК|
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