Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/63297
Title: Electromechanical Measurements of Gd-Doped Ceria Thin Films by Laser Interferometry
Authors: Ushakov, A. D.
Yavo, N.
Mishuk, E.
Lubomirsky, I.
Shur, V. Ya.
Kholkin, A. L.
Issue Date: 2016
Publisher: Knowledge E
Citation: Electromechanical Measurements of Gd-Doped Ceria Thin Films by Laser Interferometry / A. D. Ushakov, N. Yavo, E. Mishuk, I. Lubomirsky, V. Ya. Shur, A. L. Kholkin // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 177-182. — DOI: 10.18502/kms.v1i1.582
Abstract: Highly sensitive laser interferometer was built to measure electromechanical coupling in Gd-doped ceria Ce0.9Gd0.1O2−x thin films in the frequency range up to 20 kHz. Spurious resonances due to substrate bending were avoided by the special mounting of the film in the center of substrate. Compact design allowed to reach high vertical resolution of about 0.2 pm. Electrostriction coefficient measured in 1 μm thick Ce0.9Gd0.1O2−x film was 4.3×10−21m2/V2 and slightly decreased with frequency till the extensional resonance of the substrate at about 20 kHz occurred. As expected, the displacement varied as a square of applied voltage without any sign of saturation. A comparison with ceramics showed much higher electrostriction coefficient in the latter in the same frequency range.
Keywords: GADOLINIUM DOPED CERIA
THIN FILMS
LASER INTERFEROMETRY
ELECTROSTRICTION
URI: http://hdl.handle.net/10995/63297
Conference name: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology
Conference date: 23.06.2016-26.06.2016
WOS ID: WOS:000395106000030
ISSN: 2519-1438
DOI: 10.18502/kms.v1i1.582
metadata.dc.description.sponsorship: The equipment of the Ural Center for Shared Use “Modern Nanotechnology” of the Ural Federal University was used. The research was made possible by Russian Foundation for Basic Research (grant 15-52-06006-MNTI_a) and by government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).
Origin: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016
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