Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/63283
Title: Electrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho)
Authors: Lopatin, D. A.
Guseva, A. F.
Pestereva, N. N.
Vostrotina, E. L.
Baldina, L. I.
Issue Date: 2016
Publisher: Knowledge E
Citation: Electrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho) / D. A. Lopatin, A. F. Guseva, N. N. Pestereva, E. L. Vostrotina, L. I. Baldina // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 103-108. — DOI: 10.18502/kms.v1i1.570
Abstract: Electrical properties of Gd2(WO4)3 and Ho2(WO4)3 were studied and the type of charge carriers was determined. The studied compounds have a salt-like isle structure with isolated tetrahedrons. It crystallises in the Eu2(WO4)3 structural type, so-called `defective scheelite', in which 1/3 of Ln sites are vacant, Ln2/3[V L n ]1/3WO4. Predominant ionic conductivity in Ln2(WO4)3 (Ln = Gd, Ho) was established both by the EMF method and from independence of conductivity versus oxygen partial pressure. A minor contribution (4-11%) of the anion [WO4]2− transport was detected by the Tubandt method, which along with the results of the EMF technique proves the predominant oxygen conductivity.
Keywords: LANTHANIDE TUNGSTATES
ION TRANSFERENCE NUMBERS
TUBANDT METHOD
ELECTRICAL CONDUCTIVITY VERSUS TEMPERATURE
OXYGEN PARTIAL PRESSURE
URI: http://hdl.handle.net/10995/63283
Conference name: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology
Conference date: 23.06.2016-26.06.2016
WOS ID: WOS:000395106000018
ISSN: 2519-1438
DOI: 10.18502/kms.v1i1.570
metadata.dc.description.sponsorship: The research results were obtained in the framework of the State Task of the Ministry of Education and Science of Russia and supported by the grants of the Russian Foundation for Basic Research RFBR 14-03-00804_a. The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used.
Origin: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016
Appears in Collections:АТУРК

Files in This Item:
File Description SizeFormat 
kms.v1i1.570.pdf1,03 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.