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|Title:||Self-trapping of the d-d charge transfer exciton in bulk NiO evidenced by X-ray excited luminescence|
|Authors:||Sokolov, V. I.|
Pustovarov, V. A.
Churmanov, V. N.
Ivanov, V. Yu.
Gruzdev, N. B.
Sokolov, P. S.
Baranov, A. N.
Moskvin, A. S.
Пустоваров, В. А.
|Citation:||Self-trapping of the d-d charge transfer exciton in bulk NiO evidenced by X-ray excited luminescence / V. I. Sokolov, V. A. Pustovarov, V. N. Churmanov, V. Yu. Ivanov, N. B. Gruzdev, P. S. Sokolov, A. N. Baranov, A. S. Moskvin // JETP Letters. — 2012. — Vol. 95. — № 10. — P. 528-533.|
|Abstract:||Soft X-ray (XUV) excitation did make it possible to avoid the predominant role of the surface effects in luminescence of NiO and revealed a bulk luminescence with a puzzling well isolated doublet of very narrow lines with close energies near 3. 3 eV which is assigned to recombination transitions in self-trapped d-d charge transfer (CT) excitons formed by coupled Jahn-Teller Ni + and Ni 3+ centers. The conclusion is supported both by a comparative analysis of the CT luminescence spectra for NiO and solid solutions Ni xZn 1 - xO, and by a comprehensive cluster model assignment of different p-d and d-d CT transitions, their relaxation channels. To the best of our knowledge, it is the first observation of the luminescence due to self-trapped d-d CT excitons. © 2012 Pleiades Publishing, Ltd.|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS|
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