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dc.contributor.authorLisenkov, V. V.en
dc.contributor.authorShklyaev, V. A.en
dc.date.accessioned2014-11-29T19:45:49Z-
dc.date.available2014-11-29T19:45:49Z-
dc.date.issued2013-
dc.identifier.citationLisenkov V. V. Generation of accelerated electrons in a gas diode with hot channel / V. V. Lisenkov, V. A. Shklyaev // Technical Physics Letters. — 2013. — Vol. 39. — № 8. — P. 730-733.en
dc.identifier.issn1063-7850-
dc.identifier.other1good_DOI
dc.identifier.other96603e16-668c-4355-b71f-0c6b33ff171fpure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=84883624382m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/27132-
dc.description.abstractGeneration of fast electrons in an inhomogeneous medium composed of a hot channel (spark channel, laser plume, etc.) surrounded by air under normal conditions has been numerically analyzed. The model used makes it possible to carry out consistent calculation of the formation of subnanosecond gas discharge and generation of accelerated electrons under these conditions. The fast-electron current is found to consist of two pulses. One of them has an amplitude of 50 A, width of 30 ps, and electron energy of more than 100 keV. These electrons are generated in the hot channel. The other pulse has an amplitude of 170 A, width of 20 ps, and electron energy in the range of 8-50 keV. These electrons are generated in cold air. Since these pulses pass successively and barely overlap, the total width of fast-electron pulse is almost 50 ps. © 2013 Pleiades Publishing, Ltd.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.sourceTechnical Physics Lettersen
dc.titleGeneration of accelerated electrons in a gas diode with hot channelen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.typeinfo:eu-repo/semantics/articleen
dc.identifier.rsi20449529-
dc.identifier.doi10.1134/S1063785013080221-
dc.identifier.scopus84883624382-
local.affiliationInstitute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federationen
local.affiliationYeltsin Ural Federal University, Yekaterinburg, 620002, Russian Federationen
local.affiliationInstitute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk, 634055, Russian Federationen
local.affiliationNational Research Tomsk Polytechnic University, Tomsk, 634050, Russian Federationen
local.contributor.employeeЛисенков Василий Викторовичru
local.description.firstpage730-
local.description.lastpage733-
local.issue8-
local.volume39-
dc.identifier.wos000323844300018-
local.contributor.departmentИнститут новых материалов и технологийru
local.identifier.pure893038-
local.identifier.eid2-s2.0-84883624382-
local.identifier.wosWOS:000323844300018-
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